High‐resolution x‐ray analysis of compressively strained 1.55 μm GaInAs/AlGaInAs multiquantum well structures near the critical thickness

Autor:	Alois Krost, J. Böhrer, Armin Dadgar, Dieter Bimberg, Herbert Burkhard, S. Hansmann, R.F. Schnabel
Rok vydání:	1995
Předmět:	Diffraction Materials science Photoluminescence Physics and Astronomy (miscellaneous) business.industry Relaxation (NMR) Chemical vapor deposition Laser law.invention Wavelength law Optoelectronics Metalorganic vapour phase epitaxy business Quantum well
Zdroj:	Applied Physics Letters. 67:3325-3327
ISSN:	1077-3118 0003-6951
Popis:	Compressively strained InP/GaInAs/AlGaInAs multiquantum well (MQW) laser structures with up to 15 QWs designed for 1.55 μm emission wavelength were grown by metalorganic chemical vapor deposition (MOCVD) on p‐type InP(001) substrates. Crystallographic and optical properties are studied using double crystal x‐ray diffraction and photoluminescence measurements. The rocking curves of the complicated MQW structure can be perfectly modeled using dynamical diffraction theory. The critical thickness observed for strain relaxation upon growth and laser processing is found to be in good agreement with that predicted by Matthews and Blakeslee [J. Cryst. Growth 27, 118 (1974)] taking into account the MQW structure and the cap layer.
Databáze:	OpenAIRE
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