Pressure Dependence of the Electronic Band Gap in 6HSic

Autor:	Gerard Martinez, F. Engelbrecht, Reinhard Helbig, G. Wellenhofer, C. Peppermüller, Jan Zeman, Ulrich Rössler
Rok vydání:	1996
Předmět:	Band gap Chemistry Exciton Hydrostatic pressure Direct and indirect band gaps Emission spectrum Atomic physics Local-density approximation Condensed Matter Physics Electronic band structure Pressure coefficient Electronic Optical and Magnetic Materials
Zdroj:	physica status solidi (b). 198:81-86
ISSN:	1521-3951 0370-1972
DOI:	10.1002/pssb.2221980111
Popis:	Photoluminescence experiments on 6H-SiC doped with nitrogen have been performed at low temperature (T = (29 ± 2) K) under hydrostatic pressure up to 5 GPa. The pressure coefficients of the S0, R0, P0, S02, and R02 emission lines related to the neutral nitrogen donor bound excitons were determined. The pressure coefficient of the indirect gap of 6H-Sic deduced from the P0 line turns out to be +2.0 meV/GPa. Nonrelativistic band structure calculations within the density-functional theory based on the local density approximation are used to calculate the pressure coefficients of the indirect band gaps of the 6H, 4H, and 3C SiC polytypes. The comparison with available experimental data shows good agreement with the theoretical results.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::cceb0965b5be0762d174c2113c4a4694 https://doi.org/10.1002/pssb.2221980111 Zobrazit plný text záznamu Plný text