Investigation of the Effect of Doping on Transition Layers of Anisotype GaInAsP and InP Heterostructures Obtained by the Method of MOCVD
| Autor: | V. I. Kuchinskii, B. V. Pushnyi, D. Yu. Kazantsev, R. V. Levin, V. I. Vasil’ev, A. E. Marichev, B. Ya. Ber, G. S. Gagis |
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| Rok vydání: | 2020 |
| Předmět: |
010302 applied physics
Materials science Physics and Astronomy (miscellaneous) Doping Analytical chemistry chemistry.chemical_element Heterojunction 02 engineering and technology Substrate (electronics) Chemical vapor deposition 021001 nanoscience & nanotechnology 01 natural sciences Metal chemistry visual_art 0103 physical sciences visual_art.visual_art_medium Metalorganic vapour phase epitaxy 0210 nano-technology Layer (electronics) Arsenic |
| Zdroj: | Technical Physics Letters. 46:961-963 |
| ISSN: | 1090-6533 1063-7850 |
| DOI: | 10.1134/s1063785020100053 |
| Popis: | When studying doped anisotypic heterostructures with Ga1 – xInxAsyP1 – y layers grown on InP substrates with an InP buffer layer by metal organic chemical vapor deposition, the presence of transition regions is revealed in the Ga1 – xInxAsyP1 – y layer from the side of the substrate in some of the samples, along which the arsenic content (y) increases from the interface with the InP layer to the surface of the structure by a Δy value of up to 0.15, while the content of elements of the third group (x) remains constant. |
| Databáze: | OpenAIRE |
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