Enhancement of the Schottky Barrier Height using a Nitrogen-Rich Tungsten Nitride Thin Film for the Schottky Contacts on AlGaN/GaN Heterostructures
| Autor: | Jui Chien Huang, Edward Yi Chang, Chia Ta Chang, Chung Yu Lu, Mei Hsuan Lin, Ching Tung Lee |
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| Rok vydání: | 2008 |
| Předmět: |
Materials science
business.industry Schottky barrier chemistry.chemical_element Schottky diode Gallium nitride Sputter deposition Tungsten Condensed Matter Physics Metal–semiconductor junction Electronic Optical and Magnetic Materials chemistry.chemical_compound chemistry Materials Chemistry Optoelectronics Electrical and Electronic Engineering Thin film business Tungsten nitride |
| Zdroj: | Journal of Electronic Materials. 37:624-627 |
| ISSN: | 1543-186X 0361-5235 |
| DOI: | 10.1007/s11664-008-0384-9 |
| Popis: | Tungsten, stoichiometric W2N, and nitrogen-rich W2N films were used as Schottky contacts on AlGaN/GaN heterostructures. The nitrogen content in the film was controlled by varying the nitrogen-to-argon gas flow ratio during the reactive sputter deposition. The diode with the nitrogen-rich film exhibited a higher Schottky barrier height and the leakage current was comparable to that of the Ni/Au Schottky contact. Analysis suggested that this was due to the increase of the tungsten nitride work function as the result of higher nitrogen incorporation. Furthermore, after 600°C thermal annealing, the diode was stable and showed no change in the leakage current. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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