In situ studies of the effect of silicon on GaN growth modes
| Autor: | Jeffrey A. Eastman, Orlando Auciello, Paul T. Fini, James S. Speck, M. V. Ramana Murty, G. B. Stephenson, Steven P. DenBaars, Carol Thompson, Anneli Munkholm |
|---|---|
| Rok vydání: | 2000 |
| Předmět: |
Materials science
Silicon business.industry Annealing (metallurgy) Doping chemistry.chemical_element Mineralogy Crystal growth Condensed Matter Physics Epitaxy Inorganic Chemistry chemistry.chemical_compound chemistry Impurity Materials Chemistry Optoelectronics Disilane Metalorganic vapour phase epitaxy business |
| Zdroj: | Journal of Crystal Growth. 221:98-105 |
| ISSN: | 0022-0248 |
| Popis: | We present real-time X-ray scattering studies of the influence of silicon on the homoepitaxial growth mode of GaN grown by metal-organic vapor-phase epitaxy. Both annealing of Si-doped GaN and surface dosing of GaN with disilane are shown to change the mode of subsequent growth from step-flow to layer-by-layer. By comparing the growth behavior induced by doped layers which have been annealed to that induced by surface dosing, we extract an approximate diffusion coefficient for Si in GaN of 3.5 ×10 −18 cm 2 / s at 810°C. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
|
Full Text from ScienceDirect