Carbon-Based Three-Dimensional SRAM Cell with Minimum Inter-Layer Area Skew Considering Process imperfections
| Autor: | Yanan Sun, Jiachen Jiang, Weifeng He, Zhigang Mao, Volkan Kursun |
|---|---|
| Rok vydání: | 2019 |
| Předmět: |
010302 applied physics
Materials science Yield (engineering) Sram cell Process (computing) Skew chemistry.chemical_element 02 engineering and technology Carbon nanotube 01 natural sciences 020202 computer hardware & architecture law.invention chemistry law 0103 physical sciences 0202 electrical engineering electronic engineering information engineering Electronic engineering Static random-access memory Carbon Electronic circuit |
| Zdroj: | ASICON |
| Popis: | In this paper, a robust monolithic three-dimensional (M3D) 4N4P eight carbon nanotube MOSFETs (8-CN-MOSFET) static random-access memory (SRAM) cell is presented for achieving high integration density with tolerance to the removal of metallic carbon nanotubes. While maintaining the high functional yield and robust read/write operations, the layout area of the proposed 16K-bit M3D 4N4P 8-CN-MOSFET SRAM array is reduced by 45.32% and 31.56% as compared to the previously published 2D and M3D 6N2P 8-CN-MOSFET SRAM circuits, respectively. |
| Databáze: | OpenAIRE |
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