CAM/TCAM - NML
| Autor: | Douglas L. Willian, Amanda F. Fonseca, Luiz G. C. Melo, Omar P. Vilela Neto, Thiago R. B. S. Soares |
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| Rok vydání: | 2017 |
| Předmět: |
Hardware_MEMORYSTRUCTURES
Computer science business.industry Circuit design 02 engineering and technology Content-addressable memory 021001 nanoscience & nanotechnology 020202 computer hardware & architecture Memory address CMOS Computer architecture Embedded system Logic gate 0202 electrical engineering electronic engineering information engineering 0210 nano-technology business Word (computer architecture) AND gate Electronic circuit |
| Zdroj: | SBCCI |
| DOI: | 10.1145/3109984.3110004 |
| Popis: | Among the new technologies that have emerged in the past few years to address the limits of CMOS, Nanomagnetic Logic (NML) is one of the most promising. NML circuits are composed of nanosized elongated magnets that operate at room temperature with ultra-low switching power dissipation. To create an NML circuit, the designer must place the magnets in such a way that, through magnetostatic interactions, signal propagation and logic are accomplished. The design of large NML circuits is at its infancy, where case studies involving complex circuits are lacking. To bridge this gap, we have examined two study cases: a Content Addressable Memory (CAM) and its ternary variant called Ternary Content Addressable Memory (TCAM). CAM/TCAM differ from traditional RAM as the input is a data word instead of a memory address. CAM/TCAM provides the position where a given word can be found. In this paper, we present an overview of the functionality of NML, the proposed architectures, and its basic building blocks. We simulated the designs and showed that the memories work as expected. This work shows a potential tool for NML components design. |
| Databáze: | OpenAIRE |
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