Large ferroelectric-polarization-modulated photovoltaic effects in bismuth layered multiferroic/semiconductor heterostructure devices
| Autor: | Yang Chai, Tao Zhang, Ting-Wei Chen, Ren-Kui Zheng, Ke Wang, Haiwu Zheng, Jian-Min Yan, Jing-Shi Ying, Guoliang Yuan, Zhi-Xue Xu |
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| Rok vydání: | 2021 |
| Předmět: |
Photocurrent
Materials science business.industry Open-circuit voltage Heterojunction 02 engineering and technology General Chemistry 021001 nanoscience & nanotechnology 01 natural sciences Ferroelectricity Semiconductor 0103 physical sciences Materials Chemistry Ultraviolet light Optoelectronics 010306 general physics 0210 nano-technology business Polarization (electrochemistry) Short circuit |
| Zdroj: | Journal of Materials Chemistry C. 9:3287-3294 |
| ISSN: | 2050-7534 2050-7526 |
| DOI: | 10.1039/d0tc05638c |
| Popis: | Ferroelectrics are appealing candidates for photovoltaic applications. In this study, Bi5FeTi3O15 (BFTO) single layer and ZnO/BFTO bilayer films were deposited onto 0.7 wt% Nb-doped SrTiO3 (NSTO) electrically conducting single-crystal substrates to form Ag/BFTO/NSTO and Ag/ZnO/BFTO/NSTO photovoltaic devices. It was found that the insertion of an n-type semiconducting ZnO layer eliminates the built-in electric field between the Ag electrode and the BFTO film and results in the formation of a BFTO/ZnO p–n junction with a built-in electric field whose direction points to the BFTO film. These effects, together with the depolarization field within the BFTO film, provide a favorable energy level alignment for efficient electron extraction. As a result, the short circuit photocurrent density (Jsc) was improved by nearly 50 fold to 2.2 mA cm−2 and the output power density was increased by 15 fold to 0.09 mW cm−2 under ultraviolet light (λ = 405 nm) illumination. Upon the reversal of the ferroelectric polarization direction from downward to upward, the Jsc and the open circuit voltage (Voc) were increased by 2.5 and 4 fold for the Ag/BFTO/NSTO device and by 2.83 and 8.5 fold for the Ag/ZnO/BFTO/NSTO device, respectively. This work provides an effective way for developing efficient ferroelectric and semiconductor based photovoltaic devices. |
| Databáze: | OpenAIRE |
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