Temperature Evolution as an effect of Wire-bond Failures in a Multi-Chip IGBT Power Module
| Autor: | Stefan Mollov, R. Delamea, Nicolas Degrenne |
|---|---|
| Rok vydání: | 2020 |
| Předmět: |
Wire bonding
Materials science business.product_category 020209 energy 020208 electrical & electronic engineering Condition monitoring Mechanical engineering 02 engineering and technology Insulated-gate bipolar transistor Chip Reliability (semiconductor) Power module 0202 electrical engineering electronic engineering information engineering Die (manufacturing) business Degradation (telecommunications) |
| Zdroj: | 2020 22nd European Conference on Power Electronics and Applications (EPE'20 ECCE Europe). |
| DOI: | 10.23919/epe20ecceeurope43536.2020.9215944 |
| Popis: | Multi-chip power switches consist of several dies in parallel. The temperature of these dies is not equal and evolves during ageing, in part as a consequence of wire-bond degradation. The temperature distribution may impact the condition monitoring and the overall reliability. It is thus necessary to understand how the temperature distribution is modified by wire-bond degradation. In this paper, wirebond lift-offs are reproduced experimentally by sequentially sectioning the hottest wire of the hottest die of a multi-chip IGBT module. The results show that at the beginning of the degradation, hot spots move away from the more recent wire-bond lift-off, contributing to temperature equalization. However, this effect collapses as fewer bonds remain attached towards the end of the module life. |
| Databáze: | OpenAIRE |
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