D.c. arc plasma deposition of smooth nanocrystalline diamond films
Autor: | A.A. Smolin, V. G. Ralchenko, E.N. Loubnin, S.M. Metev, Vitali I. Konov, Elena D. Obraztsova, Gerd Sepold, Sergej M. Pimenov |
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Rok vydání: | 1995 |
Předmět: |
Auger electron spectroscopy
Materials science Mechanical Engineering Material properties of diamond Analytical chemistry Diamond Mineralogy General Chemistry Chemical vapor deposition engineering.material Nanocrystalline material Electronic Optical and Magnetic Materials symbols.namesake Carbon film Materials Chemistry engineering symbols Electrical and Electronic Engineering Thin film Raman spectroscopy |
Zdroj: | Diamond and Related Materials. 4:1073-1078 |
ISSN: | 0925-9635 |
DOI: | 10.1016/0925-9635(95)00283-9 |
Popis: | We report on chemical vapour deposition growth of nanocrystalline (grain size 30–50 nm) diamond films of 100 nm to 2 μm thickness in methane-rich mixtures. A d.c. arc discharge in CH4H2Ar gas mixtures with a methane percentage CH4(CH4 + H2) varied from 10% to 100% was used for diamond deposition on Si substrates seeded with ultrafine (5 nm) diamond particles. The films obtained were characterized by scanning electron microscopy, X-ray diffraction, Raman spectroscopy and X-ray excited Auger electron spectroscopy. Remarkably well-crystallized diamond films were produced even in hydrogen-free gas mixtures. Raman spectra confirmed the nanocrystalline structure of all the films examined. The film hardness measured with a nanoindenter was in the range 70–85 GPa typical for diamond, the highest values corresponding to 100% methane content. The films were very smooth with surface roughness Ra < 20 nm. The essential improvement in surface smoothness was obtained by means of laser-induced disintegration of coalesced seeding particles. |
Databáze: | OpenAIRE |
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