GaN Power ICs: Reviewing Strengths, Gaps, and Future Directions
| Autor: | Samantha K. Murray, Mohammad Shawkat Zaman, Olivier Trescases, W. L. Jiang |
|---|---|
| Rok vydání: | 2020 |
| Předmět: |
Computer science
business.industry Electrical engineering Gallium nitride Hardware_PERFORMANCEANDRELIABILITY Power (physics) chemistry.chemical_compound Semiconductor chemistry Logic gate Hardware_INTEGRATEDCIRCUITS Key (cryptography) Power semiconductor device Current (fluid) business Electronic circuit |
| Zdroj: | 2020 IEEE International Electron Devices Meeting (IEDM). |
| DOI: | 10.1109/iedm13553.2020.9371918 |
| Popis: | This paper reviews monolithic GaN integration for power ICs, focusing on current technological capabilities. We highlight key opportunities for integrating low-voltage circuits alongside power devices to support converter operation. Simulations and experimental results from the imec 200 V GaN-on-SOI and ON Semiconductor 650 V GaN-on-Si processes provide quantitative insights for digital and analog circuitry. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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