Rapid epitaxial growth of conducting and insulating III-V compounds on (001), (110), (111)A, (311)A, and (311)B surfaces by hydride vapor phase epitaxy

Autor:	M. Deschler, R. Beccard, N. Gopalakrishnan, R. Holz, Sebastian Lourdudoss
Rok vydání:	1999
Předmět:	Structural material Materials science Hydride Metallurgy Metals and Alloys Analytical chemistry Mineralogy Chemical vapor deposition Condensed Matter Physics Epitaxy Mechanics of Materials Electrical resistivity and conductivity Growth rate Thin film Ohm
Zdroj:	Metallurgical and Materials Transactions A. 30:1047-1051
ISSN:	1543-1940 1073-5623
DOI:	10.1007/s11661-999-0157-y
Popis:	Rapid growth of conducting or insulating InP, GaAs, Ga0.47In0.53As, and GaAs0.6P0.4 on one or more of substrates of orientations (001), (110), (111)A, (311)A, and (311)B by hydride vapor phase epitaxy (HVPE) is demonstrated. The maximum growth rate of the binaries lies between 12 and 300 µm/h and that of the ternaries between 7 and 170 µm/h. A simple model is developed to describe the influence of crystallographic orientation on temperature-dependent growth rates. The model is compared with the experimental data. Room-temperature resistivity of insulating InP:Fe can be as high as 5 × 109 ohm cm. Temperature-dependent differential resistivity is also analyzed. This feasibility of growing conducting and insulating layers rapidly on substrates of different orientations is very useful for electronic and optoelectronic devices.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::cc9660eac50e2ac95e57d2afe57b8a56 https://doi.org/10.1007/s11661-999-0157-y Zobrazit plný text záznamu Full text from SpringerLink