3.3 kV Rated Silicon Carbide Schottky Diodes with Epitaxial Field Stop Ring

Autor:	C. Mark Johnson, A.B. Horsfall, Konstantin Vassilevski, Irina P. Nikitina, Nicolas G. Wright
Rok vydání:	2011
Předmět:	Materials science business.industry Mechanical Engineering Doping Schottky diode Condensed Matter Physics Epitaxy Reverse leakage current chemistry.chemical_compound chemistry Mechanics of Materials Silicon carbide Optoelectronics General Materials Science Wafer Reactive-ion etching business Diode
Zdroj:	Materials Science Forum. :555-558
ISSN:	1662-9752
DOI:	10.4028/www.scientific.net/msf.679-680.555
Popis:	3.3 kV rated 4H-SiC diodes with nickel monosilicide Schottky contacts and 2-zone JTE regions were fabricated on commercial epitaxial wafers having a 34 m thick blocking layer with donor concentration of 2.2×1015 cm-3. The diodes were fabricated with and without additional field stop rings to investigate the impact of practically realizable stopper rings on the diode blocking characteristics. The field stop ring was formed by reactive ion etching of heavily doped epitaxial capping layer. The diodes with field stop rings demonstrated significantly higher yield and reduction of reverse leakage current. The diodes demonstrated blocking voltages in excess of 4.0 kV and very low change of leakage current at ambient temperatures up to 200 °C.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::cc8e546e96ba9d494b6f3ffecad9b9aa https://doi.org/10.4028/www.scientific.net/msf.679-680.555 Zobrazit plný text záznamu