Simulation Studies on ZnO Nanoparticle Based FET Device for Possible Biosensing Applications
Autor: | Ujjwol Barman, Namami Goswami, Roy Paily, Siddhartha Sankar Ghosh |
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Rok vydání: | 2018 |
Předmět: |
Materials science
business.industry Transconductance Nanoparticle 02 engineering and technology 010402 general chemistry 021001 nanoscience & nanotechnology 01 natural sciences Subthreshold slope 0104 chemical sciences Threshold voltage Logic gate Miniaturization Optoelectronics Field-effect transistor 0210 nano-technology business Biosensor |
Zdroj: | 2018 IEEE 18th International Conference on Nanotechnology (IEEE-NANO). |
Popis: | In this paper, a Field Effect Transistor (FET) having ZnO nanoparticles as the channel layer is simulated and proposed for possible biosensing applications. Based on simulations carried out using device simulation tool COGENDA TCAD, performance analysis in terms of threshold voltage, subthreshold slope, transconductance and on-off current ratio is measured. The structure under investigation is a bottom-gate FET device. The drain current flowing through the channel is controlled by the external potential applied at the gate terminal. The channel acts as a chemiresistive channel, whose conductivity changes on being electrostatically bound to certain biomolecule or protein. Based on its positive zeta potential, the electrostatic affinity of ZnO nanoparticles with certain proteins can be employed for specific detection of that protein. In addition, the simulated ZnO nanoparticles based FET device has dimensions favorable to be used as a biosensor along with scope of miniaturization. Hence, it can be stated that the proposed FET will be of great promise for future nanobiosensors, and if realized by proper fabrication, it may outperform the conventional sensors already in use for detection of biomolecules as well as for theranostic applications. |
Databáze: | OpenAIRE |
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