High-mobility GaN-on-sapphire p-n diodes with near-unity ideality factor and large breakdown voltage
| Autor: | Simon Kotzea, Michael Heuken, Arne Debald, Holger Kalisch, Andrei Vescan |
|---|---|
| Rok vydání: | 2019 |
| Předmět: |
010302 applied physics
Electron mobility Materials science Acoustics and Ultrasonics business.industry 02 engineering and technology 021001 nanoscience & nanotechnology Condensed Matter Physics Epitaxy 01 natural sciences Surfaces Coatings and Films Electronic Optical and Magnetic Materials 0103 physical sciences Sapphire Breakdown voltage Optoelectronics Metalorganic vapour phase epitaxy 0210 nano-technology business Ohmic contact Diode p–n diode |
| Zdroj: | Journal of Physics D: Applied Physics. 52:285101 |
| ISSN: | 1361-6463 0022-3727 |
| DOI: | 10.1088/1361-6463/ab1b0b |
| Popis: | In this work, GaN-based p-n diodes with thick drift layers grown by metal organic vapor phase epitaxy (MOVPE) on sapphire were investigated. We discuss their characteristics and develop a simulation model to fit the experimental data. The fabricated diodes feature almost linear ohmic p-GaN contacts, a near-unity ideality factor, a high electron mobility cm2 V−1 s−1, low m cm2 and a large breakdown voltage V. |
| Databáze: | OpenAIRE |
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