Characteristics of Current-Injected GaN-Based Vertical-Cavity Surface-Emitting Lasers
| Autor: | Hao-Chung Kuo, Shing-Chung Wang, Zhen-Yu Li, Chun-Yen Chang, Po-Min Tu, Chien-Kang Chen, Tzeng-Tsong Wu, Shih-Wei Chen, Hsiao-Wen Zan, Cheng-Hung Chen, Tien-Chang Lu |
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| Rok vydání: | 2011 |
| Předmět: |
Materials science
business.industry Physics::Optics Gallium nitride Laser Atomic and Molecular Physics and Optics law.invention Vertical-cavity surface-emitting laser Optical pumping Condensed Matter::Materials Science chemistry.chemical_compound Optics chemistry Distributed Bragg reflector laser law Optical cavity Optoelectronics Spontaneous emission Electrical and Electronic Engineering business Lasing threshold |
| Zdroj: | IEEE Journal of Selected Topics in Quantum Electronics. 17:1594-1602 |
| ISSN: | 1558-4542 1077-260X |
| DOI: | 10.1109/jstqe.2011.2116771 |
| Popis: | This paper reviews the fabrication technology and performance characteristics of current-injected GaN-based vertical-cavity surface-emitting lasers (VCSELs) with hybrid distributed Bragg reflectors (DBRs). The GaN-based VCSEL consists of a ten-pair Ta2O5/SiO2 top DBR, a 7 λ-thick optical cavity embedded with 10 InGaN/GaN multiquantum wells, and a 29-pair AlN/GaN bottom DBR. Lasing action is observed under continuous-wave operation at room temperature. The laser characteristics, such as temperature-dependent laser threshold current, emission wavelength, and spontaneous emission coupling factors, have been measured and discussed. |
| Databáze: | OpenAIRE |
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