In2O3 Nanowire Field-Effect Transistors with Sub-60 mV/dec Subthreshold Swing Stemming from Negative Capacitance and Their Logic Applications
| Autor: | Bensong Wan, Caofeng Pan, Qian Xu, Zheng Yang, Zhong Lin Wang, Junfeng Lu, Guofeng Hu, Fangtao Li, Xingqiang Liu |
|---|---|
| Rok vydání: | 2018 |
| Předmět: |
010302 applied physics
Materials science business.industry Transconductance Transistor General Engineering Nanowire General Physics and Astronomy 02 engineering and technology 021001 nanoscience & nanotechnology 01 natural sciences law.invention Orders of magnitude (capacitance) law Logic gate 0103 physical sciences Optoelectronics General Materials Science Field-effect transistor 0210 nano-technology business Negative impedance converter Voltage |
| Zdroj: | ACS Nano. 12:9608-9616 |
| ISSN: | 1936-086X 1936-0851 |
| DOI: | 10.1021/acsnano.8b05604 |
| Popis: | Heat dissipation is a key issue for scaling metal-oxide-semiconductor field-effect transistors (MOSFETs). The Boltzmann distribution of electrons imposes a physical limit on the subthreshold swing (SS), which impedes both the reduction of the switching energy and the further increase of the device density. The negative capacitance effect is proposed to rescue MOSFETs from this phenomenon called “Boltzmann tyranny”. Herein, we report In2O3 nanowire (NW) transistors with SS values in the sub-60 mV/dec region, which utilize the ferroelectric P(VDF-TrFE) as the dielectric layer. An ultralow SS down to ∼10 mV/dec is observed and spans over 5 orders of magnitude in the drain current. Meanwhile, a high on/off ratio of more than 108 and a transconductance (gm) of 2.3 μS are obtained simultaneously at Vd = 0.1 V. The results can be understood by the “voltage amplification” effect induced from the negative capacitance effect. Moreover, the steep slope FET-based inverters indicate a high voltage gain of 41.6. In add... |
| Databáze: | OpenAIRE |
| Externí odkaz: |
|