Effect of annealing time and pressure on electrical activation and surface morphology of Mg-implanted GaN annealed at 1300 °C in ultra-high-pressure nitrogen ambient

Autor:	Michal Bockowski, Tetsu Kachi, Kazufumi Hirukawa, Jun Suda, Kensuke Sumida, Hideki Sakurai, Masahiro Horita, Kacper Sierakowski
Rok vydání:	2021
Předmět:	Materials science Morphology (linguistics) Annealing (metallurgy) General Engineering Analytical chemistry General Physics and Astronomy chemistry.chemical_element Acceptor Nitrogen chemistry Reduced nitrogen Isothermal annealing Inner diameter Ultra high pressure
Zdroj:	Applied Physics Express. 14:121004
ISSN:	1882-0786 1882-0778
Popis:	We performed an isothermal annealing study on Mg-implanted GaN at 1300 °C in an ultra-high-pressure (1 GPa) nitrogen ambient. Annealing for more than 30 min resulted in a high acceptor activation ratio and a low compensation ratio that were comparable to those obtained with annealing at 1400 °C for 5 min. We also performed annealing at 1300 °C in a reduced nitrogen pressure of 300 MPa which makes us possible to expand the inner diameter of annealing equipment in the future. High electrical activation, similar to one obtained by annealing at 1 GPa, was successfully obtained.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::cc6983fb41fbde6b4906e6106201e649 https://doi.org/10.35848/1882-0786/ac39b0 Zobrazit plný text záznamu