Low voltage stress-induced-leakage-current in ultrathin gate oxides

Autor:	Mark S. Rodder, Sunil V. Hattangady, P. Chen, Robert M. Wallace, Douglas T. Grider, P.E. Nicollian
Rok vydání:	2003
Předmět:	Stress (mechanics) Materials science CMOS business.industry Gate dielectric Electrical engineering Optoelectronics Sense (electronics) SILC business Low voltage Quantum tunnelling Voltage
Zdroj:	1999 IEEE International Reliability Physics Symposium Proceedings. 37th Annual (Cat. No.99CH36296).
Popis:	Stress-induced-leakage-current (SILC) is an important concern in ultrathin gate oxides because it may impose constraints on dielectric thickness scaling. We show that for oxides less than /spl sim/3.5 nm thick, interfacial traps generated from direct tunneling stress result in a sense voltage dependent SILC mechanism that can dominate the gate leakage current at low operating voltages.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::cc63474f37f901e5fe18fd3dc3124320 https://doi.org/10.1109/relphy.1999.761646 Zobrazit plný text záznamu