Applications of ZnO:Al deposited by RF sputtering to InN low-cost technology
| Autor: | S. Fernández, F. B. Naranjo, S. Valdueza-Felip, O. de Abril |
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| Rok vydání: | 2010 |
| Předmět: |
Indium nitride
Materials science business.industry Contact resistance Doping Mineralogy Heterojunction Surfaces and Interfaces Sputter deposition Condensed Matter Physics Surfaces Coatings and Films Electronic Optical and Magnetic Materials chemistry.chemical_compound chemistry Sputtering Materials Chemistry Optoelectronics Electrical and Electronic Engineering business Layer (electronics) Ohmic contact |
| Zdroj: | physica status solidi (a). 207:1717-1721 |
| ISSN: | 1862-6319 1862-6300 |
| DOI: | 10.1002/pssa.200983725 |
| Popis: | InN/ZnO:Al heterostructures deposited at low temperature on Different substrates by radio-frequency sputtering were studied. Using ZnO:Al as buffer layer, an improvement in the InN structural properties was achieved. Evaluating ZnO:Al as contact on InN, an Ohmic behaviour for the as-deposited layer on InN was achieved. A specific contact resistance of 2 Ω cm 2 was measured without any post-deposition treatment. These properties could result very promising for optoelectronic device applications. |
| Databáze: | OpenAIRE |
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