A novel method for the growth of good quality GaAs at extremely low substrate temperatures (as low as 120 °C)

Autor:	L.F. Eastman, J. G. Zhu, Bijan Tadayon, Michael G. Spencer, G. L. Harris, Saied Tadayon, J. Griffin
Rok vydání:	1990
Předmět:	Photoluminescence Materials science business.industry General Engineering Mineralogy chemistry.chemical_element Crystal growth Substrate (electronics) Epitaxy symbols.namesake chemistry symbols Optoelectronics Thin film business Raman spectroscopy Indium Molecular beam epitaxy
Zdroj:	Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 8:131
ISSN:	0734-211X
DOI:	10.1116/1.584839
Popis:	In this work, a novel method for the growth of good quality GaAs at extremely low substrate temperatures (as low as 120 °C) is introduced. This novel method is based on three different methods: The migration‐enhanced epitaxy method, the indium doping method, and the low growth rate method. The good quality of the GaAs layers are confirmed by Raman spectroscopy, 4 K photoluminescence, and transmission electron microscopy. This novel growth method results in the best GaAs material ever grown at 120 °C by any growth method using a molecular beam epitaxy machine.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::cc3f17ab18e93eac2143e141526e1650 https://doi.org/10.1116/1.584839 Zobrazit plný text záznamu