| Autor: |
E.G. Njoroge, A.J. Botha, C.C. Theron, Jacobus J. Terblans, X.-L. Yan, N.G. van der Berg, Hameda A. Abrass |
| Rok vydání: |
2015 |
| Předmět: |
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| Zdroj: |
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms. 359:85-88 |
| ISSN: |
0168-583X |
| DOI: |
10.1016/j.nimb.2015.07.012 |
| Popis: |
The reaction between a thin film (126 nm) of Co and Si has been studied at 450 °C for 24 h under high vacuum conditions, in the presence of a FeZr barrier layer. Without a diffusion barrier layer between Co and Si, Co 2 Si forms at 350 °C as the initial phase while CoSi 2 forms at 550 °C. The FeZr barrier layer changed the flux of atoms arriving at the reaction interface. Co reacted with the Si from the substrate and formed a mixed layer of CoSi and CoSi 2 in the interlayer region. The use of the FeZr diffusion barrier has been demonstrated to lower the temperature formation of CoSi 2 to 450 °C. The reactions were characterised by Rutherford backscattering spectrometry, Auger electron spectroscopy depth profiling, X-ray diffraction using CoK α radiation and scanning electron microscopy. |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
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