Concentration-Fluctuation Model of a Doped Semiconductor in the Nonmetallic Regime. III. Coulomb Gap

Autor:	Jia-Lin Zhu, R Riklund, K.A. Chao
Rok vydání:	1987
Předmět:	Physics Coulomb's constant Condensed matter physics business.industry Doping Hartree–Fock method Electronic structure Condensed Matter Physics Atomic and Molecular Physics and Optics Semiconductor Excited state Coulomb business Mathematical Physics Excitation
Zdroj:	Physica Scripta. 35:490-498
ISSN:	1402-4896 0031-8949
DOI:	10.1088/0031-8949/35/4/014
Popis:	Using the unrestricted Hartree-Fock scheme in the framework of pseudocluster calculation developed by us earlier, the Coulomb gap is investigated for compensated doped semiconductors in deep nonmetallic regime. For given degree of compensation, we obtain a power law behavior of the Coulomb gap Δc ∝ Pν, where P is the donor concentration and ν 1/3. Above the Coulomb gap the excitation spectrum exhibits a sharp threshold. Relation between the present quantum mechanical treatment and the classical treatment is discussed.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::cc263dba9708b5d56506431706283e5c https://doi.org/10.1088/0031-8949/35/4/014 Zobrazit plný text záznamu