Temperature dependence of Q in spiral inductors fabricated in a silicon-germanium/BiCMOS technology

Autor:	David L. Harame, Robert A. Groves, D. Jadus, K. Stein
Rok vydání:	2002
Předmět:	Materials science Silicon business.industry Electrical engineering chemistry.chemical_element Context (language use) Substrate (electronics) Atmospheric temperature range Inductor Silicon-germanium chemistry.chemical_compound chemistry Q factor Optoelectronics business Electrical impedance
Zdroj:	Proceedings of the 1996 BIPOLAR/BiCMOS Circuits and Technology Meeting.
DOI:	10.1109/bipol.1996.554635
Popis:	The behavior of on-chip planar inductors fabricated over a conductive silicon substrate has been characterized over the temperature range from -55/spl deg/C to 125/spl deg/C for the first time. Q was observed to decrease with increasing temperature over the frequency range up to and including the frequency where Q peaks. Inductance was seen to vary little across the temperature and frequency range up to one-half the self-resonant frequency. The behavior of Q with temperature was explained in the context of the temperature coefficients of its resistive parasitics. An energy-based definition for Q that takes into account the distributed nature of the planar inductor was presented and shown to give higher numbers than the conventional impedance-based definition at frequencies above one-tenth of the self-resonant frequency.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::cc2155d9ee83747ce4df7e3d5f4b4757 https://doi.org/10.1109/bipol.1996.554635 Zobrazit plný text záznamu