Voltage-Dependent Temperature Coefficient of the I–V Curves of Crystalline Silicon Photovoltaic Modules
| Autor: | Takuya Doi, Hironori Ohshima, Takakazu Takenouchi, Michiya Higa, Yoshihiro Hishikawa, Kengo Yamagoe, Masahiro Yoshita |
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| Rok vydání: | 2018 |
| Předmět: |
010302 applied physics
Materials science Silicon business.industry 020209 energy Photovoltaic system chemistry.chemical_element 02 engineering and technology Function (mathematics) Condensed Matter Physics 01 natural sciences Temperature measurement Electronic Optical and Magnetic Materials chemistry 0103 physical sciences 0202 electrical engineering electronic engineering information engineering Optoelectronics Solar simulator Crystalline silicon Electrical and Electronic Engineering business Temperature coefficient Voltage |
| Zdroj: | IEEE Journal of Photovoltaics. 8:48-53 |
| ISSN: | 2156-3403 2156-3381 |
| Popis: | The temperature dependence of the I–V curves of various kinds of commercial crystalline silicon photovoltaic modules is investigated, based on experiments by using a solar simulator and a thermostatic chamber. The temperature coefficient (TC) of the output voltage of the modules with p-n junction technology is found to closely agree with a formula as a function of their output voltage per cell and temperature, throughout the voltage range of about 0.5–0.7 V per cell, which is important for estimating the P max, fill factor, and V oc of the modules. The formula is derived from a one-diode model, and reproduces the TC of the I–V curves within ±5% relative error without adjusting the parameter for each module. The formula is successfully applied for translating the modules' I–V curves. |
| Databáze: | OpenAIRE |
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