Hybrid photovoltaic structures based on amorphous silicon and P3HT:PCBM/PEDOT:PSS polymer semiconductors
| Autor: | Adrian Itzmoyotl, Ismael Cosme, Antonio J. Olivares, H.E. Martinez, Andrey Kosarev, Svetlana Mansurova |
|---|---|
| Rok vydání: | 2016 |
| Předmět: |
Amorphous silicon
Materials science Nanotechnology 02 engineering and technology Chemical vapor deposition 01 natural sciences Biomaterials chemistry.chemical_compound PEDOT:PSS Plasma-enhanced chemical vapor deposition 0103 physical sciences Materials Chemistry Electrical and Electronic Engineering Thin film 010302 applied physics business.industry General Chemistry Hybrid solar cell 021001 nanoscience & nanotechnology Condensed Matter Physics Electronic Optical and Magnetic Materials Organic semiconductor chemistry Optoelectronics 0210 nano-technology business Short circuit |
| Zdroj: | Organic Electronics. 38:271-277 |
| ISSN: | 1566-1199 |
| Popis: | Hybrid thin film photovoltaic structures, based on hydrogenated silicon (Si:H), organic poly(3-hexythiophene):methano-fullerenephenyl-C61-butyric-acid-methyl-ester (P3HT:PCBM) and poly(3,4ethylenedioxythiophene):poly(4-styrenesulfonate) (PEDOT:PSS) films, have been fabricated. Organic semiconductor thin films were deposited by spin-coating technique and were exposed to radio frequency plasma enhanced chemical vapor deposition (RF PECVD) of Si:H films at deposition temperature T d = 160 °C. Different types of structures have been investigated: H1) ITO/(p)SiC:H /P3HT:PCBM/(n) Si:H, H2) ITO/PEDOT:PSS/(i)Si:H/(n) Si:H and H3) ITO/PEDOT:PSS/P3HT:PCBM/(i)Si:H/(n)Si:H. Short circuit current density spectral response and current-voltage characteristics were measured for diagnostic of the photovoltaic performance. The current density spectral dependence of hybrid structures which contains organic layers showed improved response (50–80%) in high photon energy range (hν ≈ 3.1–3.5 eV) in comparison with Si:H reference structure. An adjustment in the absorbing layer thickness and in the contact material for ITO/PEDOT:PSS/(i)Si:H/(n)Si:H structure, resulted in a remarkably high short circuit current density (as large as 17.74 mA/cm 2 ), an open circuit voltage of 640 mV and an efficiency of 3.75%. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
|
Full Text from ScienceDirect