Control of optical loss in GaN-based planar cavities

Autor:	Baoping Zhang, Lei-Ying Ying, Hao-Chung Kuo, Wenjie Liu, Jiang-Yong Zhang, X. L. Hu
Rok vydání:	2015
Předmět:	Materials science business.industry Gallium nitride Condensed Matter Physics Vertical-cavity surface-emitting laser Indium tin oxide chemistry.chemical_compound Optics Planar chemistry Optoelectronics General Materials Science Electrical and Electronic Engineering business Layer (electronics)
Zdroj:	Superlattices and Microstructures. 88:561-566
ISSN:	0749-6036
DOI:	10.1016/j.spmi.2015.10.020
Popis:	Optical losses in GaN-based resonant planar cavity are discussed and experimentally examined in respects of indium tin oxide (ITO) inner-cavity current spreading layer, the defect-rich GaN layer, and multi-quantum well (MQW) active region. Devices with different structures are adopted to study the optical loss. It is demonstrated that a thin ITO layer and a coupled MQW active region are essential to achieve a low loss and high Q-value cavity. The results show that low-loss MQW design is particularly important in fabricating high-Q value GaN-based planar cavities.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::cc0fe077f4667687060b02d5ba34c9be https://doi.org/10.1016/j.spmi.2015.10.020 Zobrazit plný text záznamu Full Text from ScienceDirect