Intra- and Interband Free-Carrier Absorption and the Fundamental Absorption Edge inn-Type InP

Autor: W. P. Dumke, George David Pettit, M. R. Lorenz
Rok vydání: 1970
Předmět:
Zdroj: Physical Review B. 1:4668-4673
ISSN: 0556-2805
DOI: 10.1103/physrevb.1.4668
Popis: The infrared absorption in $n$-type InP was studied as a function of free-carrier concentration from 3.5\ifmmode\times\else\texttimes\fi{}${10}^{17}$ to \ensuremath{\sim} ${10}^{19}$ ${\mathrm{cm}}^{\ensuremath{-}3}$ in the spectral range of 10 \ensuremath{\mu} to the fundamental absorption edge. The Burstein shifted edge, the normal intraband free-carrier absorption, and the interband free-carrier absorption were analyzed. The fundamental edge shifts to higher energy with increasing free-carrier concentration but only by 47% of the expected Burstein shift. The energy separation between the central-conduction-band minimum and the next higher conduction valleys in InP was found to be 0.90 \ifmmode\pm\else\textpm\fi{} 0.02 eV.
Databáze: OpenAIRE