Intervalley mechanism of negative difference conductance of double-heterojunction bipolar transistors
| Autor: | I Khmyrova, V Ryzhii |
|---|---|
| Rok vydání: | 1991 |
| Předmět: |
Condensed matter physics
Scattering Chemistry Electrical model Bipolar junction transistor Conductance Material system Heterojunction Condensed Matter::Mesoscopic Systems and Quantum Hall Effect Condensed Matter Physics Acceptor Electronic Optical and Magnetic Materials Condensed Matter::Materials Science Materials Chemistry Electrical and Electronic Engineering Common emitter |
| Zdroj: | Semiconductor Science and Technology. 6:771-776 |
| ISSN: | 1361-6641 0268-1242 |
| DOI: | 10.1088/0268-1242/6/8/010 |
| Popis: | A theoretical investigation of double-heterojunction bipolar transistors (DHBTs) based on the layered N+-N-n-N-N+ heterostructures in the III-V material system with acceptor delta-layer near an emitter N-n interface has been undertaken in an attempt to determine the peculiarities of their current-voltage characteristics. It has been shown that intervalley scattering in narrow-gap n-type base layers results in negative difference conductance. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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