Performance and reliability of 1200V SiC planar MOSFETs fabricated on 150mm SiC substrates
| Autor: | Kevin Matocha, Levi Gant, K. Rangaswamy, C. Hundley, Blake Powell, Sauvik Chowdhury |
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| Rok vydání: | 2016 |
| Předmět: |
010302 applied physics
Materials science business.industry Electrical engineering 02 engineering and technology 021001 nanoscience & nanotechnology 01 natural sciences Threshold voltage Stress (mechanics) chemistry.chemical_compound Reliability (semiconductor) Planar CMOS chemistry Logic gate 0103 physical sciences Silicon carbide Optoelectronics 0210 nano-technology business Scaling |
| Zdroj: | 2016 IEEE 4th Workshop on Wide Bandgap Power Devices and Applications (WiPDA). |
| DOI: | 10.1109/wipda.2016.7799929 |
| Popis: | In this paper we demonstrate the performance and reliability of 1200V SiC DMOSFETs manufactured in a high volume 150mm Si CMOS foundry. These DMOSFETs exhibit less than a 10% shift in threshold voltage and practically no change in breakdown characteristics after high temperature stress tests at 175°C. The performance of very large area 6.30 × 9.45mm2, 11mΩ SiC DMOSFETs prove that device scaling is possible with a common process. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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