Pressure Dependence of Photoluminescence in GaAs/Partially Ordered GaInP Interface
| Autor: | Jun′ichiro Nakahara, Toshihiko Kobayashi, Kazuo Uchida, Takashi Ohmae |
|---|---|
| Rok vydání: | 1999 |
| Předmět: |
Photoluminescence
Condensed matter physics Chemistry General Engineering General Physics and Astronomy Astrophysics::Cosmology and Extragalactic Astrophysics Electronic structure Electron Condensed Matter::Mesoscopic Systems and Quantum Hall Effect Spectral line Blueshift Condensed Matter::Materials Science Spontaneous emission Excitation Quantum well |
| Zdroj: | Japanese Journal of Applied Physics. 38:1004 |
| ISSN: | 1347-4065 0021-4922 |
| DOI: | 10.1143/jjap.38.1004 |
| Popis: | We have measured the photoluminescence (PL) spectra of GaAs/GaInP single quantum wells at pressures up to ∼5 GPa, and investigated the characteristics of the 1.46 eV deep emission band. It has a very long decay time of 200–400 ns. In addition, at normal pressure, unlike the emission from the GaAs well, a strong blueshift of the spectral position with excitation intensity is observed. With increasing pressure, the deep emission shows a sublinear shift towards higher energy, while the GaAs well exhibits a linear shift. The pressure-dependent PL behavior at lower excitation intensity is rather similar to those observed for partially ordered GaInP alloys. These results suggest that the presence of ordered GaInP layers plays an important role in the radiative recombination at 1.46 eV, and the 1.46 eV deep emission is related to the interface transitions of electrons and holes localized at the heterointerface. |
| Databáze: | OpenAIRE |
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