Transmission line with 2-kV HBM broadband ESD protection using BIMOS and SCR in advanced CMOS technologies
| Autor: | Jean Jimenez, Jean-Michel Fournier, Philippe Benech, Boris Heitz, Philippe Galy, T. Lim |
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| Rok vydání: | 2012 |
| Předmět: |
Electrostatic discharge
Computer science business.industry Transistor Electrical engineering Hardware_PERFORMANCEANDRELIABILITY Integrated circuit law.invention Integrated injection logic CMOS Parasitic capacitance law Low-power electronics Hardware_INTEGRATEDCIRCUITS Electronic engineering RFIC business Hardware_LOGICDESIGN |
| Zdroj: | 2012 Asia Pacific Microwave Conference Proceedings. |
| DOI: | 10.1109/apmc.2012.6421491 |
| Popis: | Advanced CMOS technologies provide an easier way to realize radio-frequency integrated circuits (RFICs). However, transistor gates are getting smaller and electrostatic discharges (ESD) issues become more significant. Unfortunately, ESD protections parasitic capacitance limits the operating bandwidth of the RFICs. ESD protection size dimensions are also an issue to protect RFICs. This paper presents measurements results of ESD protection devices able to be implemented in an I/O pad in advanced CMOS technologies. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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