Characterization of Advanced Sequential Flow Deposition (ASFD) TiON electrode in MIM structure for leakage current reduction
| Autor: | Sara Aoki, Masaki Koizumi, Masaki Sano, Tadahiro Ishizaka, Tatsuhiko Tanimura, Kentaro Shiraga, Masato Koizumi, Cheonsoo Han, Koji Akiyama, Seokhyoung Hong |
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| Rok vydání: | 2016 |
| Předmět: |
010302 applied physics
Materials science business.industry Analytical chemistry Electrical engineering chemistry.chemical_element 02 engineering and technology Metal-insulator-metal 021001 nanoscience & nanotechnology 01 natural sciences Capacitance chemistry Electrical resistivity and conductivity 0103 physical sciences Electrode Limiting oxygen concentration 0210 nano-technology business Tin Layer (electronics) Deposition (law) |
| Zdroj: | 2016 IEEE International Interconnect Technology Conference / Advanced Metallization Conference (IITC/AMC). |
| DOI: | 10.1109/iitc-amc.2016.7507724 |
| Popis: | Advanced Sequential Flow Deposition (ASFD) TiON electrode was developed and mechanism of leakage current reduction with ASFD TiON electrode was studied. ASFD TiON film was fabricated by repeating TiN layer formation and oxidation. Resistivity and crystal structure depended on oxygen concentration in TiON film. Oxygen concentration was controlled precisely by oxidation frequency. Electrical characteristic was evaluated using Metal Insulator Metal (MIM) structure. We observed lower leakage current when oxygen concentration in TiON film was higher. Element analysis of high-k capacitance (Al2O3/ZrO2) indicated that TiON top electrode suppressed leakage current caused by Poole-Frenkel conduction. |
| Databáze: | OpenAIRE |
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