Circuit Monitoring Across Design Life-Cycle in 28nm FD-SOI and 40nm Bulk CMOS technologies

Autor: F. Pourchon, Rohit Goel, Kedar Janardan Dhori, Sylvain Clerc, Robin Wilson, Sebastien Marchal, Ricardo Gomez Gomez, Christian Dutto
Rok vydání: 2021
Předmět:
Zdroj: ESSCIRC
DOI: 10.1109/esscirc53450.2021.9567890
Popis: This paper presents circuit monitoring, reviewing different classes of silicon monitoring solutions, the specificity of each class, and where they best fit in the life-cycle of circuit design. A diversified circuit monitoring strategy is presented, that encompasses Early-Silicon versus Computer-Aided-Design (CAD) calibration, In-Die High Volume Manufacturing (HVM) testing and In-Field Dynamic monitoring, coupled with Adaptative Voltage Scaling (AVS) and/or Adaptative Body-Bias (ABB) live compensation. Illustrations of Silicon measurement and CAD simulation analysis from 40nm CMOS and 28nm FD-SOI, general purpose and automotive derivative, are presented.
Databáze: OpenAIRE