High-field transport of inversion-layer electrons and holes including velocity overshoot
| Autor: | Chenming Hu, H. Gaw, Fariborz Assaderaghi, Jeffrey Bokor, P.K. Ko, D. Sinitsky |
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| Rok vydání: | 1997 |
| Předmět: |
Electron mobility
Drift velocity Materials science Condensed matter physics Velocity saturation Analytical chemistry Saturation velocity Electron Electronic Optical and Magnetic Materials Condensed Matter::Materials Science Gate oxide Velocity overshoot Surface roughness Electrical and Electronic Engineering |
| Zdroj: | IEEE Transactions on Electron Devices. 44:664-671 |
| ISSN: | 0018-9383 |
| DOI: | 10.1109/16.563373 |
| Popis: | In this paper, we experimentally address the effect of a wide range of parameters on the high-field transport of inversion-layer electrons and holes. The studied parameters include substrate doping level, surface micro-roughness, vertical field strength, nitridation of the gate oxide, and device channel length. We employ special test structures built on Silicon-On-Insulator (SOI) and bulk wafers to accurately measure the high-field drift velocity of inversion-layer carriers. Our findings point to electron velocity overshoot at room temperature, dependence of electron and hole saturation velocities on nitridation of the gate oxide, dependence of the high-field drift velocity on the effective vertical field, and relative insensitivity of electron and hole mobility and saturation velocity to moderate surface roughness. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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