First-principles study of structural and electronic properties of antimonene doped with Ge, Sn, Se, Te

Autor: Sneha Upadhyay, Pankaj Srivastava
Rok vydání: 2021
Předmět:
Zdroj: Journal of Solid State Chemistry. 302:122355
ISSN: 0022-4596
DOI: 10.1016/j.jssc.2021.122355
Popis: A first-principles study of the renowned two-dimensional (2D) material antimonene has been presented in this work emphasizing over its structural and electronic properties. Antimonene is subjected to be doped with Germanium (Ge), Strontium (Sn), Selenium (Se) and Tellurium (Te) atom. Doping with each of these atoms is seen to be highly feasible and the lattice parameters of the pristine antimonene are well-sustained. The bandstructure analysis indicates a shift towards metallic nature as the antimonene is semiconducting in its pristine form. This shift later gets confirmed by the density of states (DOS) plot and the charge transferred between the dopant and the antimonene monolayer. Moreover, the electron density spectrum shows the density of charges all over the structure and the electron difference density confirms the charge accumulation nearby the bond and cloud formation. The electronic properties infer that Ge and Sn behave as p-type doping whereas Se and Te behave as n-type doping for antimonene. The tuning of electronic properties of antimonene with these dopants demonstrates a great potential for applications like sensors, optoelectronic and energy storage devices.
Databáze: OpenAIRE