| Autor: |
Roberto Annunziata, L. Favennec, F. Disegni, D. Turgis, Jean-Luc Ogier, Remi Beneyton, Xavier Federspiel, N. Cherault, Fausto Piazza, A. Gandolfo, M. Molgg, E. Ciantar, Enrico Gomiero, P.O. Sassoulas, J. P. Reynard, B. Dumont, S. Delmedico, Alexandre Villaret, Olivier Weber, A. Viscuso, Franck Arnaud, L. Clement, L. Desvoivres, Paulo Ferreira, Paolo Mattavelli, C. Gallon, R. Ranica, O. Kermarrec, J. Jasse, S. Chouteau, C. Jahan, C. Boccaccio, Paolo Cappelletti, A. Souhaite, G. Samanni, Paola Zuliani, R. Berthelon, V. Caubet, Philippe Boivin, D. Ristoiu, Alfonso Maurelli, J. C. Grenier |
| Rok vydání: |
2020 |
| Předmět: |
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| Zdroj: |
2020 IEEE International Electron Devices Meeting (IEDM). |
| DOI: |
10.1109/iedm13553.2020.9371934 |
| Popis: |
in this paper we present an enhancement of our 28nm FDSOI-PCM solution using Bipolar Junction Transistor (BJT) selector co-integrated with triple gate oxide devices scheme (logic/1,8V/5V) for advanced automotive microcontroller designs. Leveraging FDSOI substrate, innovative Super-STI (SSTI) scheme has been developed enabling 0,019um2 PCM cell. It is the densest eNVM cell reported so far, based on our knowledge. Ultimate analog performance targets for automotive have been successfully demonstrated without compromising reliability for 5V transistor thanks to a novel gate stack & spacers architecture. Automotive grade-0 reliability criteria have been achieved on 16MB PCM array, including 3x aggressive runs of soldering reflow thermal stress (265°C/210s). Finally, wide reading window has been shown even after 250K writing operation at 165°C. |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
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