Computer Simulation and Controlled Growth of Large Diameter Czochralski Silicon Crystals
| Autor: | A. Kran, K. M. Kim, P. Smetana, G. H. Schwuttke |
|---|---|
| Rok vydání: | 1983 |
| Předmět: |
Fabrication
Temperature control Silicon Solid-state physics Mathematical model Renewable Energy Sustainability and the Environment business.industry chemistry.chemical_element Crystal growth Condensed Matter Physics Surfaces Coatings and Films Electronic Optical and Magnetic Materials Monocrystalline silicon Optics chemistry Materials Chemistry Electrochemistry Optoelectronics business Single crystal |
| Zdroj: | Journal of The Electrochemical Society. 130:1156-1160 |
| ISSN: | 1945-7111 0013-4651 |
| DOI: | 10.1149/1.2119907 |
| Popis: | Computer simulation leading to controlled large diameter Czochralski crystal growth is discussed. A simple mathematical model, which describes the different crystal growth phases including neck‐in, fast flat top, roll‐over to constant diameter bulk growth, and tail‐off is presented. This model, in conjunction with a computer‐implemented simulator, is used to simulate silicon crystal growth. Good agreement between simulation results and experimental crystal growth is obtained. |
| Databáze: | OpenAIRE |
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