Quasi-floating gate MOSFET based low voltage current mirror

Autor:	Rockey Gupta, Susheel Sharma
Rok vydání:	2012
Předmět:	Engineering Resistive touchscreen Current mirror business.industry Bandwidth (signal processing) MOSFET General Engineering Electrical engineering Floating-gate MOSFET business Low voltage Electronic circuit Voltage
Zdroj:	Microelectronics Journal. 43:439-443
ISSN:	0026-2692
DOI:	10.1016/j.mejo.2012.04.006
Popis:	This paper demonstrates the use of quasi-floating gate MOSFET (QFGMOS) in the design of a low voltage current mirror and highlights its advantages over the floating gate MOSFET (FGMOS). The use of resistive compensation has been shown to enhance the bandwidth of QFGMOS current mirror. The proposed current mirror based on QFGMOS has a current range up to 500@mA with offset of 2.2nA, input resistance of 235@W, output resistance of 117k@W, current transfer ratio of 0.98, dissipates 0.83mW power and exhibits bandwidth of 656MHz which increases to 1.52GHz with resistive compensation. The theoretical and simulation results are in good agreement. The workability of the circuits has been verified using PSpice simulation for 0.13@mm technology with a supply voltage of +/-0.5V.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::cb85251cb00a93ab6b2b10794cf60250 https://doi.org/10.1016/j.mejo.2012.04.006 Zobrazit plný text záznamu Full Text from ScienceDirect