Sensitivity enhancement of potassium ion (K+) detection based on graphene field-effect transistors with surface plasma pretreatment
| Autor: | Qilong Yuan, Jingyao Gao, Chen Ye, Kuan W. A. Chee, Minghui Yang, He Li, Li Fu, Qiuping Wei, Guosong Lai, Cheng-Te Lin, Pei Guo, Weitao Su, Naiyuan Cui, Dan Dai, Nan Jiang, Sudong Wu, Xiangqi Liu |
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| Rok vydání: | 2019 |
| Předmět: |
Detection limit
Materials science Graphene Potassium Metals and Alloys Analytical chemistry chemistry.chemical_element Plasma Electrolyte Condensed Matter Physics Surfaces Coatings and Films Electronic Optical and Magnetic Materials law.invention Ion chemistry law Materials Chemistry Field-effect transistor Electrical and Electronic Engineering Selectivity Instrumentation |
| Zdroj: | Sensors and Actuators B: Chemical. 285:333-340 |
| ISSN: | 0925-4005 |
| DOI: | 10.1016/j.snb.2019.01.058 |
| Popis: | Potassium (K+) ions are essential minerals that are important in maintaining fluid and electrolyte balance in biological systems and regulating bodily functions. However, abnormal K+ concentration level will cause numerous health problems or diseases. Therefore, the effective detection of physiological K+ level is very important in the healthcare field. In this work, we designed, fabricated and characterized solution-gated field effect transistors (FETs) based on high quality CVD graphene for highly sensitive and selective detection of K+ ions. O2 plasma pre-processing for 10 s yielded a limit of detection (LOD) down to 0.058 pM, and a linear dynamic range spanning from sub-0.1 pM to 100 nM. Meanwhile, as the G-quadruplex conformation possesses strong affinity for K+, the FETs exhibit excellent discrimination against other common cations, such as Na+ and Fe3+. As a result, the solution-gated graphene FETs with enhanced sensitivity and selectivity for K+ can be applied to health monitoring and disease prevention. |
| Databáze: | OpenAIRE |
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