Decreasing the Switching Current in Spin-Momentum Transfer Switching by Decreasing Ms
| Autor: | A. Tulapurkar, Yoshishige Suzuki, K. Yagami |
|---|---|
| Rok vydání: | 2004 |
| Předmět: |
Magnetoresistive random-access memory
Materials science business.industry Momentum transfer Nanotechnology Condensed Matter Physics Electronic Optical and Magnetic Materials Switching time Magnetization Memory cell Thermal Optoelectronics Electrical and Electronic Engineering business Instrumentation Current density Spin-½ |
| Zdroj: | Journal of the Magnetics Society of Japan. 28:149-152 |
| ISSN: | 0285-0192 |
| Popis: | Spin-momentum transfer switching is a promising candidate for magnetization switching with quite low consumption of electricity. However, its critical current (Ic) and current density (Jc) are still too large for it to be applied to TMR films and MRAM without breaking them electrically. Decreasing the saturation magnetization (Ms) of memory cells is effective in decreasing both Ic and Jc, because they are proportional to Ms2. Here we suggest the use of magnetic film with Ms of ∼600 emu/cm3 as a memory cell, resulting in the reduction of Ic by one digit. The estimated thermal durability and switching time were acceptable. The characteristic values of TMR films, which are necessary in order to apply spin-momentum transfer switching to MRAM, are now gaining practicality. |
| Databáze: | OpenAIRE |
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