DISCRETIZATION METHODS AND PHYSICAL MODELS FOR SIMULATING LEAKAGE CURRENTS IN SEMICONDUCTOR DEVICES WITH APPLICATION TO MODELING TRENCH‐DRAM CELLS
| Autor: | S.H. Voldman, T.D. Linton, Jeffrey B. Johnson |
|---|---|
| Rok vydání: | 1991 |
| Předmět: |
Engineering
Physical model Discretization business.industry Applied Mathematics Numerical analysis Semiconductor device Computer Science Applications Computational Theory and Mathematics Hardware_GENERAL Trench Electronic engineering Electrical and Electronic Engineering business Dram Leakage (electronics) |
| Zdroj: | COMPEL - The international journal for computation and mathematics in electrical and electronic engineering. 10:573-588 |
| ISSN: | 0332-1649 |
| DOI: | 10.1108/eb051732 |
| Popis: | Challenges to a robust and accurate implementation of electric‐field‐enhanccd thermal‐generation mechanisms in a drift‐diffusion‐based semiconductor‐device simulation code are discussed and solutions proposed. The implementation of the physical models and associated numerical methods is applied to the simulation of leakage currents in trench‐DRAM cells. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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