Anisotropically Biaxial Strain ina-Plane AlGaN on GaN Grown onr-Plane Sapphire

Autor:	Michinobu Tsuda, Akira Honshio, Motoaki Iwaya, Satoshi Kamiyama, Isamu Akasaki, Hiroko Furukawa, Hiroshi Amano
Rok vydání:	2006
Předmět:	Diffraction Materials science Physics and Astronomy (miscellaneous) Condensed matter physics business.industry General Engineering General Physics and Astronomy Heterojunction Space mapping Stress (mechanics) Reciprocal lattice Lattice constant Sapphire Optoelectronics business Layer (electronics)
Zdroj:	Japanese Journal of Applied Physics. 45:2509-2513
ISSN:	1347-4065 0021-4922
DOI:	10.1143/jjap.45.2509
Popis:	In this study, the anisotropically biaxial strain in a-plane AlGaN on GaN is investigated by X-ray diffraction (XRD) analysis using an AlGaN/GaN heterostructure grown on r-plane sapphire. In accordance with XRD reciprocal lattice space mapping, when the AlN molar fraction x in the AlGaN layer is 0.18, the AlGaN layer is fully strained under tensile stress and grows coherently on the underlying GaN layer. However, when x is as large as 0.31, partial relaxation is observed only in the c-axis direction. The tensile stress in the AlGaN layer is calculated taking the actual in-plane lattice constants of the underlying GaN layer into account, and it was found that the stress in the a-plane AlGaN layer in the c-axis direction is approximately 1.7 times larger than that in the m-axis direction.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::cb480a603f599d78ff9c26369d61f2b1 https://doi.org/10.1143/jjap.45.2509 Zobrazit plný text záznamu