Hydrogen adsorption on GaAs (001) surfaces observed by surface photoabsorption and reflectance difference spectroscopy

Autor:	Kunihiko Uwai, Naoki Kobayashi
Rok vydání:	1996
Předmět:	Hydrogen Absorption spectroscopy Chemistry Analytical chemistry chemistry.chemical_element Surfaces and Interfaces Dielectric Condensed Matter Physics Spectral line Surfaces Coatings and Films Adsorption Chemical bond Reflectance difference spectroscopy Anisotropy
Zdroj:	Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 14:879-884
ISSN:	1520-8559 0734-2101
DOI:	10.1116/1.580407
Popis:	Surface reflectance spectra are observed for H‐adsorbed GaAs (001) surfaces. Atomic hydrogen produced with a hot tungsten filament is adsorbed on the (2×4) surface, converting it to (1×1). Reflectance difference (anisotropy) spectra show an enhanced peak at 2.8 eV upon H adsorption at room temperature, which is not consistent with the notion that this peak originates from As dimers. Analysis of surface photoabsorption spectra show that surface dielectric changes along [110] for H adsorption and for Ga deposition can be represented by a superposition of a change at the bulk critical points E1,E2,E0′ of GaAs and a broad feature centering at 2.5–2.7 eV.
Databáze:	OpenAIRE
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