III–V Nitride semiconductors for high-performance blue and green light-emitting devices

Autor:	Robert M Fletcher, Heng Liu, Werner Götz, Daniel A. Steigerwald, R. Scott Kern, Serge L Rudaz
Rok vydání:	1997
Předmět:	Materials science Fabrication business.industry Alloy General Engineering engineering.material Green-light Laser law.invention law engineering Optoelectronics General Materials Science Nitride semiconductors business Diode
Zdroj:	JOM. 49:18-23
ISSN:	1543-1851 1047-4838
DOI:	10.1007/bf02914345
Popis:	Most of the rapid developments in (AlIn)GaN alloy system technology have occurred within the past few years, and the technology is still moving at a fast pace. New performance records for light-emitting diodes and laser diodes are constantly being reported. This article highlights the progression of the development of the (AlIn)GaN alloy system and describes the fabrication and performance of some of the light-emitting devices that have been produced to date.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::cb36c3f78ff9209e6c80af32b1ea92c8 https://doi.org/10.1007/bf02914345 Zobrazit plný text záznamu Full text from SpringerLink