Blue–green microcavity light emitting diode with monolithic MgZnSSe/ZnSSe Bragg reflectors
| Autor: | M. Pessa, Petteri Uusimaa, Arto Salokatve, K. Rakennus, A. Rinta-Möykky |
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| Rok vydání: | 1998 |
| Předmět: |
Fabrication
Photoluminescence Materials science business.industry Mechanical Engineering Reflector (antenna) Electroluminescence Condensed Matter Physics law.invention Optics Mechanics of Materials law Spectral width Optoelectronics General Materials Science business Quantum well Molecular beam epitaxy Light-emitting diode |
| Zdroj: | Materials Science and Engineering: B. 51:18-21 |
| ISSN: | 0921-5107 |
| DOI: | 10.1016/s0921-5107(97)00221-3 |
| Popis: | Optical properties of the first fully monolithic molecular beam epitaxy (MBE) grown II–VI microcavity light emitting diode (MCLED) structure emitting at 502 nm are studied. A CdZnSe quantum well is placed in a ZnSSe λ-cavity between MgZnSSe/ZnSSe distributed Bragg reflectors (DBR). The 20.5 period n-type bottom and 4 period p-type top mirrors are designed to have reflectivities of ≈90 and 47%, respectively. Room temperature photoluminescence (PL) measurements for the surface emitting MCLED structure show a clear increase in emission intensity and a remarkably narrow spectral width of 5 nm at the cavity resonance. Initial electrical injection tests show a very narrow spectral width of 6 nm from a MCLED emitting at 503 nm. |
| Databáze: | OpenAIRE |
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