Improving Multilevel Writes on Vertical 3-D Cross-Point Resistive Memory
| Autor: | Yu Hua, Wei Tong, Wei Zhao, Jingning Liu, Yi Chen, Linghao Song, Yang Zhang, Chengning Wang, Jie Xu, Bing Wu, Wei Xueliang, Dan Feng |
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| Rok vydání: | 2021 |
| Předmět: |
Interconnection
Computer science Transistor 02 engineering and technology Computer Graphics and Computer-Aided Design 020202 computer hardware & architecture Resistive random-access memory law.invention law 0202 electrical engineering electronic engineering information engineering Electronic engineering Array data structure State (computer science) Electrical and Electronic Engineering Resistor Power network design Software Voltage drop |
| Zdroj: | IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems. 40:762-775 |
| ISSN: | 1937-4151 0278-0070 |
| DOI: | 10.1109/tcad.2020.3006188 |
| Popis: | Resistive memory is promising to be constructed as a high-density storage-class memory. Multilevel cell, access-transistor-free cross-point array structure, and 3-D array integration are three approaches to scale up the density of resistive memory. However, composing the three approaches together strengthens the interactions between array-level and cell-level nonidealities (interconnect resistance-induced IR drop, sneak current, and device variability) of resistive memory arrays during write operations and significantly degrades write performance and reliability. In this article, we analyze the dynamic voltage-dividing effect along a selected write current path in 3-D cross-point memory arrays. We propose a nonideality-tolerant high-density resistive memory (HD-RRAM) architecture, that can weaken the interactions between nonidealities and mitigate their degradation effects on the performance and reliability of array multilevel write operations. HD-RRAM is equipped with a double-transistor array architecture with two-transistor- $n$ -resistor (2TnR) cell organization along pillars to reduce the current driving requirement and the large undesired voltage drop across each vertical pillar access transistor. Moreover, multiside asymmetric bias improves the resistive switching velocity by leveraging current-dividing effects. Variability-aware multilevel state partition reduces the worst-case write error rate by leveraging target state dependency of variability. Proportional-control multilevel state tuning reduces the average number of required write-and-verify iterations by leveraging pulse amplitude dependency of variability. Multilevel cell parallel writing improves the cell-level parallelism by leveraging the pass-through feature of intermediate resistance states. The evaluations show that HD-RRAM reduces both memory access latency and energy consumption over an aggressive baseline. |
| Databáze: | OpenAIRE |
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