| Autor: |
Seongchae Choi, Hee-Won Sunwoo, Shijin Seong, Dongchul Ihm, Ho-Kyu Kang, Jun-Bum Lee, Byoung-Ho Lee, Dong-Ryul Lee, Soo-Bok Chin, Jeong-Ho Ahn, Hyung-Seop Kim |
| Rok vydání: |
2013 |
| Předmět: |
|
| Zdroj: |
SPIE Proceedings. |
| ISSN: |
0277-786X |
| DOI: |
10.1117/12.2011387 |
| Popis: |
This paper presents a methodology for detecting defects more effectively that have a substantial yield impact on several critical layers using a simulation program, which is considerably helpful in analyzing defects on the wafer. First, this paper presents a simple analysis method that uses mathematical treatment for multi thin film layers. This instantly gives us a highly intuitive idea for selecting an inspection mode based on the reflectivity and transmittivity. Second, we introduce numerical method for wafer defect of interest with finite difference time domain (FDTD) method, and provide correlation between the expectation and experimental results. The goal of these studies is to determine the feasibility of implementing theoretical approaches with numerical method at wafer defect inspection. Overall, this paper discusses the effective wafer inspection methodology and the advantages of defect simulation with numerical analysis at semiconductor manufacturing for accelerated development of advanced design node devices. |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
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