A Lame Mode Resonator Based on Aluminum Nitride on Silicon Platform
| Autor: | Yao Zhu, Peter Hyun Kee Chang, Eldwin J. Ng, Nishida Yoshio, Zhipeng Ding, Navab Singh, Guoqiang Wu, Nan Wang, Yuandong Gu |
|---|---|
| Rok vydání: | 2018 |
| Předmět: |
010302 applied physics
Materials science Silicon business.industry Mode (statistics) Silicon on insulator chemistry.chemical_element 02 engineering and technology Nitride 021001 nanoscience & nanotechnology 01 natural sciences Resonator chemistry Aluminium Excited state 0103 physical sciences Optoelectronics 0210 nano-technology business Layer (electronics) |
| Zdroj: | 2018 IEEE 20th Electronics Packaging Technology Conference (EPTC). |
| DOI: | 10.1109/eptc.2018.8654380 |
| Popis: | A thin-film piezoelectric-on-silicon (TPoS) structured Lame mode resonator is experimentally reported in this work. The resonator is of a ring shape design and fabricated on the in-house AlN-on-SOI (silicon-on-insulator) platform. The thickness of the AlN layer and the device layer of the SOI is $1 \mu \mathrm{m}$ and $5 \mu \mathrm{m}$, respectively. Experimental results show that the Lame mode can be excited at 60.6MHz, with loaded Q factors of 3617 in air and 4708 in vacuum, demonstrating great potential for the reported resonator for applications such as timing and inertial measurement. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
|