A precision low-power analog front end in 180 nm CMOS for wireless implantable capacitive pressure sensors
Autor: | Daniel McCormick, David Budgett, Chaoping Zhang, Robert Gallichan |
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Rok vydání: | 2020 |
Předmět: |
Correlated double sampling
Materials science Bandgap voltage reference business.industry 020208 electrical & electronic engineering Electrical engineering Operational amplifier applications 02 engineering and technology Sense (electronics) Capacitance 020202 computer hardware & architecture Rectifier Analog front-end CMOS Hardware and Architecture 0202 electrical engineering electronic engineering information engineering Electrical and Electronic Engineering business Software |
Zdroj: | Integration. 70:151-158 |
ISSN: | 0167-9260 |
Popis: | This paper presents a new capacitance to voltage analog-front end (AFE) designed in 180 nm CMOS technology for wireless implantable applications. This AFE consists of a Low-dropout regulator (LDO), bandgap reference (BGR), switched-capacitor (SC) sampler, SC op-amp and oscillator. The LDO regulates the wireless power supply coming from an off-chip rectifier and provides a stable and accurate DC voltage. Capacitance is converted to a discrete voltage by a SC sampling circuit and then amplified by a SC op-amp. Both of SC sampling and SC op amp circuits form a correlated double sampling scheme. This AFE is designed to sense a capacitance range from 6 pF to 7 pF (300–1000 mmHg) corresponding to a 0.68 V–1.07 V discrete output voltage with a sampling frequency of 1.63 KHz. This AFE has a sensitivity of 0.39 mV/fF, average power consumption of 201 μW and 3.25% accuracy operating over a 2.1 V–3.3 V rectified wireless supply voltage and −40 °C ~125 °C temperature range. |
Databáze: | OpenAIRE |
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